Absolute Maximum Ratings (Tc=25℃) 
TO-92 NPN
|
PARAMETER |
SYMBOL |
VALUE |
UNIT |
|
Collector–Base Voltage |
VCBO |
400 |
V |
|
Collector–Emitter Voltage |
VCEO |
200 |
V |
|
Emitter –Base Voltage |
VEBO |
9 |
V |
|
Collector Current |
IC |
2 |
A |
|
Total Power Dissipation |
PC |
12 |
W |
|
Junction Temperature |
Tj |
150 |
℃ |
|
Storage Temperature |
Tstg |
-65-150 |
℃ |
Electronic Characteristics (Tc=25℃)
|
CHARACTERISTICS |
SYMBOL |
TEST CONDITION |
MIN |
MAX |
UNIT |
|
Collector–Base Cutoff Current |
ICBO |
VCB=400v |
|
100 |
µA |
|
Collector–Emitter Cutoff Current |
ICEO |
VCE=200v |
|
250 |
µA |
|
Collector–Emitter Voltage |
VCEO |
IC=10mA IB=0 |
200 |
|
V |
|
Emitter –Base Voltage |
VEBO |
IE=1mA IC=0 |
9 |
|
V |
|
Collector–Emitter Saturation Voltage |
Vcesat |
IC=0.5A IB=0.1A |
|
0.5 |
V |
|
IC=1.5A IB=0.5A |
|
1.0 |
V |
|
Base–Emitter Saturation Voltage |
Vbesat |
IC=1.5A IB=0.5A |
|
1.5 |
V |
|
DC Current Gain |
HFE |
VCE=5v IC=1mA |
7 |
|
|
|
VCE=5v IC=0.2A |
10 |
40 |
|
|
VCE=5v IC=2A |
5 |
|
|
|
Storage Time |
Ts |
VCC=5V IC=0.25A |
1.5 |
3.5 |
µS |
|
Diode Forward Voltage |
Vf |
IF=1.0A |
|
2 |
V |
CLASSIFICATION OF HFE AND TS
|
HFE |
10-15 |
15-20 |
20-25 |
25-30 |
|
TS |
1.5-2.0 |
2.0-2.5 |
2.5-3.0 |
3.0-3.5 |
|
SYMBOL |
Min |
Nom |
Max |
|
A |
4.3 |
|
5.3 |
|
b |
0.3 |
|
|
|
c |
0.3 |
|
|
|
D |
4.3 |
|
5.2 |
|
d |
1.0 |
|
1.7 |
|
E |
3.2 |
|
4.2 |
|
e |
|
2.54 |
|
|
e1 |
|
1.27 |
|
|
L |
12.7 |
|
|
|
L1 |
|
|
2.0 |
 | 
