Absolute Maximum Ratings (Tc=25℃)
TO-126 PNP
PARAMETER |
SYMBOL |
VALUE |
UNIT |
Collector–Base Voltage |
VCBO |
-40 |
V |
Collector–Emitter Voltage |
VCEO |
-30 |
V |
Emitter –Base Voltage |
VEBO |
-5 |
V |
Collector Current |
IC |
3 |
A |
Total Power Dissipation |
PC |
10 |
W |
Junction Temperature |
Tj |
150 |
℃ |
Storage Temperature |
Tstg |
-65-150 |
℃ |
Electronic Characteristics (Tc=25℃)
CHARACTERISTICS |
SYMBOL |
TEST CONDITION |
MIN |
MAX |
UNIT |
Collector–Base Cutoff Current |
ICBO |
VCB=-40v |
|
10 |
µA |
Collector–Emitter Cutoff Current |
ICEO |
VCE=-30v |
|
20 |
µA |
Collector–Emitter Voltage |
VCEO |
IC=-5mA IB=0 |
30 |
|
V |
Emitter –Base Voltage |
VEBO |
IE=-1mA IC=0 |
5 |
|
V |
Collector–Emitter Saturation Voltage |
Vcesat |
IC=-2A IB=-200mA |
|
0.5 |
V |
Base–Emitter Saturation Voltage |
Vbesat |
IC=-2A IB=-200mA |
|
2.0 |
V |
DC Current Gain |
HFE |
VCE=-2v IC=-1A |
100 |
400 |
|
CLASSIFICATION OF HFE AND TS
HFE |
-100~-200 |
-200~-250 |
-250~-300 |
-300~-400 |
SYMBOL |
Min |
Nom |
Max |
SYMBOL |
Min |
Nom |
Max |
A |
2.3 |
|
2.8 |
L |
15.3 |
|
16.5 |
B |
1.0 |
|
1.2 |
L1 |
|
|
2.54 |
B1 |
0.8 |
|
1.0 |
P |
3.0 |
|
3.2 |
b |
0.65 |
|
0.88 |
P1 |
|
5.0 |
|
c |
.45 |
|
0.60 |
Q |
3.6 |
|
4.4 |
D |
10.5 |
|
11.1 |
Q1 |
0.9 |
|
1.5 |
E |
7.2 |
|
7.8 |
R |
|
0.5 |
|
e |
|
2.29 |
|
|
|
|
|
|