Absolute Maximum Ratings (Tc=25℃) 
TO-220 NPN
|
PARAMETER |
SYMBOL |
VALUE |
UNIT |
|
Collector–Base Voltage |
VCBO |
700 |
V |
|
Collector–Emitter Voltage |
VCEO |
400 |
V |
|
Emitter –Base Voltage |
VEBO |
9 |
V |
|
Collector Current |
IC |
3.0 |
A |
|
Total Power Dissipation |
PC |
60 |
W |
|
Junction Temperature |
Tj |
150 |
℃ |
|
Storage Temperature |
Tstg |
-65-150 |
℃ |
Electronic Characteristics (Tc=25℃)
|
CHARACTERISTICS |
SYMBOL |
TEST CONDITION |
MIN |
MAX |
UNIT |
|
Collector–Base Cutoff Current |
ICBO |
VCB=700v |
|
100 |
µA |
|
Collector–Emitter Cutoff Current |
ICEO |
VCE=400v |
|
250 |
µA |
|
Collector–Emitter Voltage |
VCEO |
IC=10mA IB=0 |
400 |
|
V |
|
Emitter –Base Voltage |
VEBO |
IE=1mA IC=0 |
9 |
|
V |
|
Collector–Emitter Saturation Voltage |
Vcesat |
IC=1.0A IB=0.2A |
|
0.5 |
V |
|
IC=2A IB=0.5A |
|
1.0 |
V |
|
Base–Emitter Saturation Voltage |
Vbesat |
IC=1.0A IB=0.2A |
|
1.5 |
V |
|
DC Current Gain |
HFE |
VCE=5v IC=10mA |
7 |
|
|
|
VCE=5v IC=1.0A |
10 |
40 |
|
|
VCE=5v IC=3.0A |
5 |
|
|
|
Storage Time |
Ts |
VCC=5V
IC=0. 5A |
2.0 |
4.0 |
µS |
|
Falling Time |
Tf |
|
1.0 |
µS |
|
Diode Forward Voltage |
Vf |
IF=2.0A |
|
2.5 |
V |
CLASSIFICATION OF HFE AND TS
|
HFE |
10-15 |
15-20 |
20-25 |
25-30 |
|
TS |
2.0-2.5 |
2.5-3.0 |
3.0-3.5 |
3.5-4.0 |
|
SYMBOL |
Min |
Nom |
Max |
SYMBOL |
Min |
Nom |
Max |
|
A |
3.5 |
4.5 |
5.0 |
L |
12.5 |
13.5 |
14.5 |
|
B |
1.25 |
1.35 |
1.5 |
L1 |
2.5 |
3.37 |
4.5 |
|
B1 |
0.75 |
0.85 |
0.955 |
D1 |
5.9 |
6.5 |
7.1 |
|
b |
0.6 |
|
|
фb |
|
|
1.2 |
|
c |
0.35 |
0.43 |
0.55 |
Q |
1.5 |
2.5 |
3.5 |
|
D |
14.0 |
15.5 |
16.5 |
Q1 |
2.0 |
2.6 |
3.5 |
|
E |
9.0 |
10.0 |
11.0 |
Z |
3.0 |
3.8 |
4.5 |
|
e |
|
2.54 |
|
|
|
|
|
 | 
